Repairing A Couple Of Very Expensive Registered DDR5 RAM Sticks

It’s definitely a sign of the times when repair shops get handed sticks of registered ECC DDR5 RAM by businesses to try and fix, rather than just tossing the defective ones and slotting in a fresh bunch. This is how [northwestrepair] ended up with two of these ECC RDIMMs, with a current market valuation of a rather nice budget car.

The 128 GB stick was first on the bench, with the fault being that it would fail DDR5 training on boot. This suggests that one or more of the DRAM BGA packages had developed a cracked solder joint, which is something that you could conceivably fix with more diagnosing and testing for a single IC reballing.

In this case doing a reflow cycle was enough to bring the RAM back to life, with the DDR5 training now passing without issues in a test system.

For the 256 GB stick things wouldn’t be so easy, as it seemed completely dead. This suggested a dead PMIC, as this is the component on DDR5 RAM responsible for ensuring that the DRAM ICs even power on. The SPD ROM was another option, so that got swapped first, which does require reprogramming the RDIMM. For this the earlier SPD dump image was reflashed, but swapping this chip made no difference.

After some additional reflowing of a few suspect ICs, still nothing happened. Following this a lot of reballing and other troubleshooting steps followed, only for the problem to be one shorted MLCC and a broken PMIC, potentially caused by whoever dropped said RDIMM onto the server room floor.

Cracked MLCCs do appear to be a very common cause of failures, as they’re often used as filter capacitors, same as for this RDIMM. Checking for shorts across a number of such MLCCs can be a good way to shorten a diagnostic cycle. Since this RDIMM was dropped, reballing every IC probably was still a good move as this may have cracked some solder balls.

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New JEDEC DDR5 Memory Specification: Up To 8800 MT/s, Anti-Rowhammer Features

Rapid row activations (yellow rows) may change the values of bits stored in victim row (purple row).
“Row hammer” by Dsimic – Own work. Licensed under CC BY-SA 4.0 via Wikimedia Commons.

As DDR SDRAM increases in density and speed, so too do new challenges and opportunities appear. In the recent DDR5 update by JEDEC – as reported by Anandtech – we see not only a big speed increase from the previous maximum of 6800 Mbps to 8800 Mbps, but also the deprecation of Partial Array Self Refresh (PASR) due to security concerns, and the introduction of Per-Row Activation Counting (PRAC), which should help with row hammer-related (security) implications.

Increasing transfer speeds is primarily a matter of timings within the limits set by the overall design of DDR5, while the changes to features like PASR and PRAC are more fundamental. PASR is mostly a power-saving feature, but can apparently be abused for nefarious means, which is why it’s now gone. As for PRAC, this directly addresses the issue of row hammer attacks. Back in the 2014-era of DDR3, row hammer was mostly regarded as a way to corrupt data in RAM, but later it was found to be also a way to compromise security and effect exploits like privilege escalation.

The way PRAC seeks to prevent this is by keeping track of how often a row is being accessed, with a certain limit after which neighboring memory cells get a chance to recover from the bleed-over that is at the core of row hammer attacks. All of which means that theoretically new DDR5 RAM and memory controllers should be even faster and more secure, which is good news all around.

DDR-5? DDR-4, We Hardly Knew Ye

This month’s CES saw the introduction of max speed DDR5 memory from SK Hynix. Micron and other vendors are also reportedly sampling similar devices. You can’t get them through normal channels yet, but since you also can’t get motherboards that take them, that’s not a big problem. We hear Intel’s Xeon Sapphire Rapids will be among the first boards to take advantage of the new technology. But that begs the question: what is it?

SDRAM Basics

Broadly speaking, there are two primary contenders for a system that needs RAM memory: static and dynamic. There are newer technologies like FeRAM and MRAM, but the classic choice is between static and dynamic. Static RAM is really just a bunch of flip flops, one for each bit. That’s easy because you set it and forget it. Then later you read it. It can also be very fast. The problem is a flip flop usually takes at least four transistors, and often as many as six, so there’s only so many of them you can pack into a certain area. Power consumption is often high, too, although modern devices can do pretty well.

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